FORMATION METHOD OF THIN FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a formation method of such a thin film as a thin film formed by a reduced pressure plasma CVD method using a plasma CVD device under gas pressure greatly higher than the gas pressure used by the reduced pressure plasma CVD method. SOLUTION: A SiNx thin film is formed by such a plasma CVD method that the pressure in a reaction vessel provided with a mixed gas of SiH4, NH3, H2, and rare gas is nearly adjusted to atmospheric pressure. A source gas is used, of which the ratio (NH3/SiH4ratio) of NH3to SiH4in the mixture is set to 2 or more to 20 or less, and of which the distribution ratio of H2in the mixture is set to 5% or more (preferably 10% or more). COPYRIGHT: (C)2004,JPO