| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suitable especially for a high-frequency-oriented IC such as a microwave integrated circuit (MMIC), by reducing the sizes of its elements. SOLUTION: The semiconductor device has a semiconductor substrate 2, a metal layer 8 formed on the surface of the semiconductor substrate, an electrode 4 formed to cover the metal layer and whose peripheral edge portion is subjected to an ohmic contact with the semiconductor substrate, a via hole 6 formed just under the metal layer whose depth reaches from the rear surface of the semiconductor substrate to the metal layer, and a grounding electrode 7 formed on the inner surface of the via hole and on the rear surface of the semiconductor substrate which is connected with the electrode via the metal layer. COPYRIGHT: (C)2004,JPO
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