发明名称 |
Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
摘要 |
In one aspect, a method of drying a substrate includes (1) setting a gas delivery angle for an air knife used during an immersion-drying process; (2) using the air knife during immersion drying of a hydrophilic substrate; and (3) using the air knife during immersion drying of a hydrophobic substrate. The gas delivery angle is unchanged during immersion drying of both the hydrophilic substrate and hydrophobic substrate. Numerous other aspects are provided.
|
申请公布号 |
US2004031167(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20030461889 |
申请日期 |
2003.06.13 |
申请人 |
STEIN NATHAN D.;ACHKIRE YOUNES;FRANKLIN TIMOTHY J.;SVIRCHEVSKI JULIA;MAROHL DAN A. |
发明人 |
STEIN NATHAN D.;ACHKIRE YOUNES;FRANKLIN TIMOTHY J.;SVIRCHEVSKI JULIA;MAROHL DAN A. |
分类号 |
H01L21/00;(IPC1-7):F26B3/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|