| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III nitride compound semiconductor light-emitting element having high light emission efficiency. <P>SOLUTION: A reflecting surface is provided at an opposite side of the light-emitting element, to a main light-emitting surface, as seen from a light-emitting layer, and is made to incline with respect to a semiconductor growing surface. The light, emitted from the emitting layer and reflected on the reflecting surface, is radiated from a side face of the light-emitting element to the outside, without passing through a semiconductor layer (particularly, the light-emitting layer). <P>COPYRIGHT: (C)2004,JPO |
