MULTIPLE TURN FOR CONDUCTIVE LINE PROGRAMMING MRAM

摘要

A conductive line (20) for programming a magnetoresistive memory element (10) comprising N metal layers (17,19) separated by an electrically insulator layer (21), wherein the bit conductive is positioned proximate to a magnetoresistive memory device and flows a current that induces a magnetic field for programming the magnetoresistive memory device. The current needed to induce a given magnetic field is reduced by a factor of N, wherein N is a whole number greater than or equal to two. To further decrease the current, the conductive line is cladded with a ferromagnetic region (24) to increase the magnetic field proximate to the magnetoresistive random access memory device.