| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of suppressing the influence of irregular reflection even though a light of short wavelength such as a blue-violet semiconductor laser is entered, by reducing the surface ruggedness of a starting mirror which reflects the light emitted from the semiconductor laser to change the advancing direction. <P>SOLUTION: This method includes a process for forming a groove part 4 on a silicon substrate 1 by the anisotropic wet etching, a process for forming a 1st film 7 to be softened by the heat treatment and a 2nd film 8 having the tensile stress successively on the above groove, a process for flattening the surface ruggedness of the side surface of the groove part by softening the 1st film 7 by performing the heat treatment, a process for forming a light reflecting film 9 on the groove part 4, and a process for leaving the light reflecting film 9 on a specified slope of the side surface of the groove to form the starting mirror 10. <P>COPYRIGHT: (C)2004,JPO |
