| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor wafer in which fabrication time of the wafer is reduced and impurity concentration is improved, thereby a reliable high-quality device is fabricated. SOLUTION: The fabrication method includes a step of heat treatment at low temperatures in order to form nucleus generation sites in a deep region within the wafer; and a step of rapid heat treatment so that oxygen deposit and metallic impurities are trapped in the nucleus generation sites. COPYRIGHT: (C)2004,JPO
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