| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an image sensor component separation structure to improve a dark current property even with decreased area of a photodiode. SOLUTION: The manufacturing method for forming a photodiode sphere 34 and a transfer transistor T comprises a step to expose a substrate surface in a field insulating membrane forming sphere by forming a pad oxidized membrane and a pad nitrified membrane in this order on an upper surface of a substrate 30 and removing them selectively, a step to form a field insulating membrane 31 by administering thermal oxidizing treatment on a channel stop sphere 32A, the channel stop sphere 32A formed by injecting channel stop ions into a surface and a surface layer part of the substrate 30 exposed with a pad nitrified membrane mask, a step to form a residual pad nitrified membrane by removing a pad nitrified membrane from an edge end part to a given distance, the edge end part of the pad nitrified membrane facing the field insulating membrane, a step to form an additional injection sphere 32B by injecting additional ions into a surface and a surface layer part of the substrate and the field insulating membrane exposed with a residual pad nitrified membrane mask. COPYRIGHT: (C)2004,JPO
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