| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor of superior characteristics and reliability, and to provide a method for manufacturing it. SOLUTION: This semiconductor device comprises lower electrodes 11 and 12; upper electrodes 14 and 15; and a dielectric film 13 formed of a perovskite type ferroelectric containing Pb, Zr, Ti and O, which is interposed between the upper electrode and the lower electrode. The dielectric film contains a first part 13a formed of a plurality of crystal grains blocked out by grain boundaries in a plurality of directions. COPYRIGHT: (C)2004,JPO
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