| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device or the like which does not have voids or surface cracks in a wiring structure. SOLUTION: After a recess 106 and a wiring groove 107 are formed on an insulating film, such as a fluorine-added silicon oxide film 105 or the like, so that a Cu film is deposited on the film 105 to embed the recess 106 or the like. After a Cu film 111 is formed on the Cu film by first heat treating, an outside part, such as the recess 106 or the like of the film 111, is removed. Thereafter, the remaining film 111 is second heat treated in a state in which its surface is exposed. COPYRIGHT: (C)2004,JPO
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