发明名称 ELECTROSTATIC PROTECTIVE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic protective circuit with an excellent response and reduced electric power consumption. SOLUTION: When positive overvoltage due to static electricity is impressed to an input/output terminal, many electric charges due to the impressed overvoltage flow into a GND terminal through a diode 108. Thereafter, voltage between a collector and a base is lowered to a snap-back voltage through a bipolar transistor 102. Accordingly, when the overvoltage due to static electricity with rapid rise is impressed, the electric charges due to static electricity are discharged to the GND through the good response diode 108, and after the bipolar transistor 102 becomes the snap-back voltage, the electric charges due to static electricity is discharged effectively in low electric power to the GND terminal through the bipolar transistor 102. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004056044(A) 申请公布日期 2004.02.19
申请号 JP20020214980 申请日期 2002.07.24
申请人 MITSUMI ELECTRIC CO LTD 发明人 WATANABE ATSUSHI;ISHIKAWA YASUHISA
分类号 H01L27/04;H01L21/822;H01L27/06;(IPC1-7):H01L21/822 主分类号 H01L27/04
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