| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device that can shorten a temperature rise/fall time of a processing chamber. SOLUTION: A CVD device 2 is equipped with a process tube 12 wherein the processing chamber 11 is formed to house a boat 22 holding a plurality of wafers 1, a heater 32 that is arranged around the process tube 12 and heats the processing chamber 11, and a heat insulating tank 34 arranged outside the heater 32. In such a structure, a reflection member 31 for reflecting a heat of the heater 32 to the process tube 12 is formed on the inner circumference of a bell jar 30 arranged between the heater 32 and the heat insulation tank 34, and a cooling air passage 36 is formed for distributing a cooling air 35 between the bell jar 30 and the tank 34. Thus, the heat of the heater is thoroughly supplied to the processing chamber through the reflection member, so that the temperature rise/fall time can be shortened, performance or throughput of the device can be improved, and the shallow joint of ICs can be realized. COPYRIGHT: (C)2004,JPO
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