发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED TEST RELIABILITY
摘要 PURPOSE: A semiconductor memory device having improved test reliability is provided, which enables a test apparatus to recognize pass/fail state of a device to be tested easily. CONSTITUTION: The semiconductor memory device includes a plurality of data output pads, and a memory cell array(120) storing data information, and a sense amplification circuit(140) sensing and amplifying N-bit data from the memory cell array. The first data transfer path outputs a part of the N-bit data to the external through the first representative data output pad among the data output pads during a test mode. A parallel test circuit(220) judges whether the N data bits have an equal value during the test mode. And the second data transfer path outputs an output of the parallel test circuit to the external through the second representative data output pad during the test mode.
申请公布号 KR20040015589(A) 申请公布日期 2004.02.19
申请号 KR20020047872 申请日期 2002.08.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, UK RAE;KIM, SU CHEOL;LEE, JONG CHEOL
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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