METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING DAMASCENE LINE

摘要

PURPOSE: A method for manufacturing a semiconductor device using a damascene line is provided to secure a misalignment margin enough by carrying out a damascene line or bit line forming process. CONSTITUTION: A lower insulating layer(140) and an upper insulating layer are sequentially deposited at the upper portion of a substrate(105). An insulating pattern(150b) is formed by selectively etching the upper insulating layer. A plurality of first contact holes(144) are formed on the resultant structure by selectively etching the lower insulating layer using the insulating pattern. At this time, both sidewalls of the insulating pattern are etched. A plurality of damascene lines are then formed by filling the contact hole and the widened insulating pattern with conductive material. Then, the insulating pattern is selectively etched.