| 摘要 |
PURPOSE: A nitride LED(Light Emitting Diode) and a manufacturing method thereof are provided to be capable of increasing light emitting efficiency by reducing the surface area of an N type metal layer in comparison with that of an active layer. CONSTITUTION: A nitride LED is provided with an n-GaN substrate(10), an n-clad layer(11) formed at the upper portion of the n-GaN substrate, an active layer(12) formed at the upper portion of the n-clad layer, a p-clad layer(13) formed at the upper portion of the active layer, and a p-GaN layer(14) formed at the upper portion of the p-clad layer. The nitride LED further includes a P type metal layer(15) formed at the upper portion of the p-GaN layer and an N type metal layer(16) formed at the lower portion of the n-GaN substrate. At this time, the surface area of the N type metal layer is smaller than that of the active layer. |
