| 发明名称 |
HAFNIUM SILICIDE TARGET FOR FORMING GATE OXIDE FILM AND METHOD FOR PREPARATION THEREOF |
| 摘要 |
A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.
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| 申请公布号 |
KR20040015359(A) |
申请公布日期 |
2004.02.18 |
| 申请号 |
KR20047000571 |
申请日期 |
2002.06.05 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/336;C22C27/00;C23C14/06;C23C14/08;C23C14/34;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78 |
主分类号 |
H01L21/336 |
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代理人 |
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