Fabrication of solid-state device with improved lift-off

摘要

A method of depositing a feature on a substrate. A covering layer is provided on a semiconductor substrate. The covering layer may be a photoresist. The covering layer is provided with a surface inhibition layer which may be formed by applying a developer to the surface of the covering layer and subsequently heating. A region of the surface inhibition layer is then irradiated, e.g. through an aperture in a mask. A second developer is applied to remove the irradiated portion of the surface inhibition layer thereby forming an aperture. The second developer subsequently removes a portion of the underlying covering layer to form a via extending from the aperture to the substrate. The via is larger than the aperture forming an overhang. The feature is then deposited on the substrate through the aperture. Feature material is not deposited on the side walls of the via thereby reducing defects after the covering layer is lifted-off.