发明名称 POST-FORMATION FEATURE OPTIMIZATION
摘要 A method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves treating the wall with a reactive gas, by exposing the wall to the reactive gas, to cause the wall to become a cladding material and expand outwards from the wall in a defined, uniform manner until a desired size for the feature is achieved. An alternative method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves depositing a base material on at least part of the wall to facilitate plating of a material on the wall, on top of the base material, in a defined, uniform manner, and plating the at least part of the wall with the material until a desired size for the feature is achieved.
申请公布号 KR20040015286(A) 申请公布日期 2004.02.18
申请号 KR20037016825 申请日期 2003.12.23
申请人 发明人
分类号 G02B6/36;G02B6/32;G02B6/38;G02B6/42 主分类号 G02B6/36
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