发明名称 N-channel transistor
摘要 <p>An ambipolar light-emitting transistor comprising an organic semiconductive zone between an electron injecting electrode and a hole injecting electrode, that is capable of emitting light from the semiconductive zone when operated in a biasing regime in which negative electrons are injected from an electron injecting electrode into the organic semiconductive zone and positive holes are injected from a hole injecting electrode into the organic semiconductive zone.</p>
申请公布号 GB0400997(D0) 申请公布日期 2004.02.18
申请号 GB20040000997 申请日期 2004.01.16
申请人 CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED 发明人
分类号 H01L21/312;H01L51/00;H01L51/05;H01L51/30;H01L51/50;H01L51/52 主分类号 H01L21/312
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