| 摘要 |
PURPOSE: An apparatus for growing the multi-substrate of nitride chemical semiconductor is provided to be capable of considerably reducing the size of the apparatus, preventing the waste of Ga particle forming powder, and adequately conserving the temperature profile of the apparatus by using one Ga boat in a chamber. CONSTITUTION: An apparatus for growing the multi-substrate of nitride chemical semiconductor is provided with a chamber(21) heated to a predetermined high temperature by a heating part, the first reaction tube(23) installed at the first predetermined portion of the chamber, and the second reaction tube(26) installed at the second predetermined portion of the chamber. The first reaction tube is used for exhausting N2 particle forming gas to the chamber by using a plurality of nozzles. The second reaction tube is used for exhausting predetermined gas generated by reacting reaction gas to Ga powder. At this time, a Ga boat(24) for storing Ga particle forming powder is linked to the second reaction tube.
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