发明名称 Non-volatile semiconductor memory device with enhanced erase/write cycle endurance
摘要 The power-supply unit, while directing externally supplied power to the control unit and the like, accumulates an amount of power that is required by the control unit to save data from the volatile memory to the non-volatile memory. When an external power supply has started, the control unit restores data of the non-volatile memory in the volatile memory; and when the external power supply has stopped, the control unit saves data from the volatile memory to the non-volatile memory.
申请公布号 US6693840(B2) 申请公布日期 2004.02.17
申请号 US20020271139 申请日期 2002.10.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SHIMADA YASUHIRO;KATO YOSHIHISA;YAMADA TAKAYOSHI
分类号 G11C11/41;G06F12/16;G11C11/401;G11C14/00;G11C16/02;G11C16/30;(IPC1-7):G11C7/00 主分类号 G11C11/41
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