发明名称 |
Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating |
摘要 |
The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface and ending below the second surface. The electrical conductivity of the semiconductor body, that is of the component, is increased in the region of the pores. The corresponding semiconductor component has connection contacts on the first and second surfaces.
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申请公布号 |
US6693024(B2) |
申请公布日期 |
2004.02.17 |
申请号 |
US20020165936 |
申请日期 |
2002.06.10 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
LEHMANN VOLKER;SCHUBERT AXEL |
分类号 |
H01L21/225;H01L21/3063;H01L21/329;H01L21/336;H01L29/06;H01L29/08;H01L29/36;H01L29/417;H01L29/78;H01L29/861;H01L29/868;H01L31/0224;(IPC1-7):H01L21/225;H01L23/48 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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