发明名称 |
Method of manufacturing a solar cell |
摘要 |
A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.
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申请公布号 |
US6692981(B2) |
申请公布日期 |
2004.02.17 |
申请号 |
US20010961142 |
申请日期 |
2001.09.24 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
TAKATO HIDETAKA;SHIMOKAWA RYUICHI |
分类号 |
H01L31/04;H01L21/00;H01L21/30;H01L31/00;H01L31/068;H01L31/18;H01L31/20;(IPC1-7):H01L21/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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