发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain side to effectively prevent the short-channel effect. Also, since a channel forming region 105 is intrinsic or substantially intrinsic, a high mobility is realized.
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申请公布号 |
US6693299(B1) |
申请公布日期 |
2004.02.17 |
申请号 |
US19980115094 |
申请日期 |
1998.07.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;MIYANAGA AKIHARU;MITSUKI TORU;FUKUNAGA TAKESHI |
分类号 |
B82B1/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L27/76 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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