发明名称 |
Method of manufacturing semiconductor device having multilevel wiring |
摘要 |
A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielectric constant insulating layer having a specific dielectric constant lower than the specific dielectric constant of silicon oxide on the first hydrophobic insulating layer having a bydrophilized surface. A semiconductor device manufacturing method which can suppress peel-off of a low dielectric constant insulating layer from an underlying hydrophobic layer is provided.
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申请公布号 |
US6693046(B2) |
申请公布日期 |
2004.02.17 |
申请号 |
US20030410247 |
申请日期 |
2003.04.10 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKIGAWA YUKIO;FUKUYAMA SHUN-ICHI |
分类号 |
H01L21/3105;H01L21/312;H01L21/314;H01L21/768;H01L23/522;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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