发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device, which uses a crystalline silicon film having high crystallinity and a flat surface with few ridges and has high characteristics, and a method of manufacturing the semiconductor device are provided. According to the manufacturing method, a first amorphous silicon film is crystallized by using a heat treatment. A second amorphous silicon film is formed on a first crystalline silicon film thus obtained as an under film, and the second amorphous silicon film is crystallized by irradiation of laser light, so that a silicon film having excellent crystallinity and a surface with few ridges is obtained. The first crystalline silicon film and the second crystalline silicon film having different crystal structures are used as an active layer of a thin film transistor.
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申请公布号 |
US6693044(B1) |
申请公布日期 |
2004.02.17 |
申请号 |
US19990227577 |
申请日期 |
1999.01.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;HAYAKAWA MASAHIKO |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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