| 摘要 |
An integrated tunable laser structure comprising a substrate made of semiconductor material, the substrate comprising a first, a second, and a third section. The first section provides a low-selective interferometric filtering together with an amplification of a light wave resonating in the laser structure. The second section provides continuous fine-tuning and phase adjustment of the light wave, and the third section provides a wavelength selective reflection of the light wave. Each section allows current injection, wherein a current into the first section causes a wavelength shift of the low-selective interferometric filtering, a current into the second section causes a wavelength shift of resonator modes, and a current into the third section causes a wavelength shift of the wavelength selective reflection.
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