| 摘要 |
PROBLEM TO BE SOLVED: To enable a silicon oxide film and a metal buried film to be effectively flattened at a high level, excessive film layers to be effectively removed from the films, and processes to be easily controlled in a recess CMP(chemical mechanical polishing) technique where a shallow trench isolation is made or a metal buried wiring is formed and a flattening CMP technique where an interlayer insulating film is made flat. SOLUTION: In the case a substrate is polished with abrasive material which contains abrasive grains and additives that give an inflection point of polishing pressure dependence to a polishing speed, provided that a set polishing pressure, an effective polishing pressure at the recess of the substrate where a pattern is formed, an effective polishing pressure at the projection of the substrate, and a pressure at which an inflection point appears in a polishing speed on a part of the substrate where no pattern is formed are represented by P, P1, P2, and P' respectively, abrasive material which is controlled in additive content so as to enable P, P1, P2, and P' to meet a formula, P2>P'>P)P1, is used. Or, a polishing load is so set as to enable P, P1, P2, and P' to meet a formula, P2>P'>P>P1, by which polishing characteristics through which projections where a higher polishing pressure than a pressure where an inflection point appears corresponding to the pattern shape of a polished film is applied are selectively polished can be realized. |
