| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a fine and accurate pattern even on a substrate having high reflectivity, a substrate or the like in which a transparent film is interleaved by solving a problem (deterioration of a dimensional accuracy) due to halation or interference of a reflected light from the substrate and conducting an accurate mask alignment. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming an antireflection film made of a two-layer film of a lower layer as a reflection film and an upper layer as an interference film to an exposure light on the substrate, emitting a pattern inspecting light via the antireflection film in the case of exposing a desired pattern on a photosensitive thin film coating the antireflection film, thereby aligning a photomask with the substrate. |
