| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thermopile, together with its structure wherein a silicon which is impurity-diffused, is manufactured to a desired form with precision easily, while the contact-point density of a thermo couple of the thermopile is increased. SOLUTION: An impurity is diffused on the surface of an Si substrate 2 to form an impurity diffusion Si layer 10, the surface of which is masked with a desired pattern for selective removal by dry-etching method, and an etch- stopping film 12 is formed on the Si substrate surface comprising a removal part side of the impurity diffusion Si layer 10 which is removed by the dry- etching method. Thus, the impurity diffused Si layer 10 is prevented from melting at the etching of the Si substrate 2.</p> |
