| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology of forming a silicon thin film of small trap level density by irradiation with light and to provide another technology of applying the former technology to a substrate of a large area with high reproducibility. SOLUTION: In a semiconductor thin film forming method comprising a light irradiating process, a first process of projecting the image of a pattern formed on an optical mask onto the semiconductor thin film for exposing the thin film so as to modify the prescribed region of the semiconductor thin film and a second process of continuously forming insulating films on the semiconductor thin film are provided. An alignment mark is formed by the use of a color difference between the region modified by irradiation with light and the other region that is not subjected to irradiation with light and has a different color. Positioning operations are carried out in a photolithography process, an etching process, and a film removing process of removing a part of the above laminated insulating films on the semiconductor thin film from the substrate on the basis of the above alignment mark. COPYRIGHT: (C)2004,JPO |
