发明名称
摘要 <p>A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.</p>
申请公布号 JP3497722(B2) 申请公布日期 2004.02.16
申请号 JP19980048082 申请日期 1998.02.27
申请人 发明人
分类号 H01L23/28;H01L21/02;H01L21/301;H01L21/56;H01L21/60;H01L21/673;H01L23/00;H01L23/12;H01L23/31;H01L29/06;(IPC1-7):H01L23/28;H01L21/68 主分类号 H01L23/28
代理机构 代理人
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