SPLIT GATE SONOS EEPROM AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A split gate SONOS(Silicon-Oxide-Nitride-Oxide-Silicon) EEPROM and a fabricating method thereof are provided to concentrate the electric field on an edge of a nitride layer adjacent to a tip of a control gate by using the control gate for covering floating gate. CONSTITUTION: A split gate SONOS EEPROM includes a stack(139), a source/drain(190/195), an insulating oxide layer(140b), and a control gate(150b). The stack(139) is formed by laminating sequentially a bottom oxide layer(115b), a nitride layer(120b), a top oxide layer(125b), and a floating gate(135b) on a substrate(100). The source/drain(190/195) is formed on the substrate(100) between plural stacks. The insulating oxide layer(140b) is formed on sidewalls and top faces of the stacks. The control gate(150b) is formed on the insulating oxide layer(140b) to cover the floating gate(135b).