METHOD FOR FABRICATING LEVENSON TYPE PHASE SHIFT MASK

摘要

PURPOSE: A method for fabricating a Levenson type phase shift mask is provided to improve the resolution by reducing the loss of an anti-reflective layer and the roughness of a surface of a substrate. CONSTITUTION: A chrome layer(21) and an anti-reflective layer(22) are deposited on a quartz substrate(20). The first photoresist pattern is formed thereon and the anti-reflective layer(22) and the chrome layer(21) are etched. The first photoresist pattern is removed and the second photoresist pattern is formed on the quartz substrate(20) and the anti-reflective layer(22). A phase shift region(25) is formed by etching the quartz substrate. The second photoresist pattern is removed and a non-phase shift region(26) is formed by etching the quartz substrate(20).