CAPACITIVE ELEMENT AND MANUFACTURING METHOD

摘要

PURPOSE: To provide a capacitive element with a suppressed variation in composition of a ferroelectric thin film when the ferroelectric thin film is formed on a lower electrode of 100nm or smaller in a surface response rate controlling method containing a MOCVD method and to provide its manufacturing method. CONSTITUTION: A capacitive element includes a lower electrode 15, a ferroelectric thin film 16 and an upper electrode 17 on a substrate 11. The ferroelectric thin film 16 is formed in film formation in a response rate controlling method. The film thickness of the lower electrode 15 is 100 nm or smaller and a variation in film thickness of the lower electrode 15 is within 10%.