METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to avoid short defects and resistance problems occurring in a process for fabricating the semiconductor device by reducing the number of processes for forming a pad nitride layer so that an active region and a field region are made flat. CONSTITUTION: A photoresist pattern is formed on a semiconductor substrate(100) to expose the part of the substrate. The substrate is etched to form a trench by using the photoresist pattern as an etch mask. A thermal oxide layer is formed on the substrate including the trench. A liner(145) is uniformly formed on the thermal oxide layer. An oxide layer is formed on the substrate to fill the trench. The oxide layer is planarized by using the liner as a stop layer so that the oxide layer filled in the trench has the same height as the substrate.