METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to increase a process margin of a BC contact forming process by enlarging a gap between a bit line and a BC contact. CONSTITUTION: A conductive polysilicon layer and a tungsten silicide layer are formed on a semiconductor substrate on which a contact pad is formed(S1). A mask insulating layer having a bit line pattern is formed on the tungsten silicide layer(S2). The tungsten silicide layer is etched by using the mask insulating layer as a mask(S3). The bit line pattern is formed on the remaining tungsten silicide layer and the conductive polysilicon layer by using the mask insulating layer as the mask(S4).