| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device including a plate-type metal-oxide-semiconductor(MOS) capacitor is provided to prevent a substrate from being damaged by an ion implantation process by forming an impurity doped channel by a selective epitaxial growth, and to increase the quantity of charge while reducing a threshold voltage of the MOS capacitor by using a channel region composed of a density-controlled selective epitaxial layer. CONSTITUTION: A well and an isolation layer(102) are formed in a silicon substrate(100). A gate insulation layer(104) is formed on the substrate. A gate and a gate spacer are formed in a cell transistor formation region on the gate insulation layer to form a cell transistor(110). An etch process is performed to eliminate the gate insulation layer in a region for the plate-type MOS capacitor of the resultant structure having the cell transistor. A Si-SEG process is performed on the resultant structure to form a channel of the MOS capacitor. A dielectric insulation layer(130) is formed on a region for the plate-type MOS capacitor of the resultant structure having the channel of the MOS capacitor. A salicide process is performed on the resultant structure to form a salicide layer(150) by using the dielectric insulation layer as a mask. After a conductive layer is deposited on the resultant structure, an etch process is performed to form an upper electrode(160) on the dielectric insulation layer.
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