METHOD FOR DEPOSITING HIGH QUALITY LAYER BY INCREASING FLUX

摘要

PURPOSE: A method for depositing a high quality layer by increasing flux is provided to increase the density of plasma and the flux by using a characteristic of cesium in a deposition process. CONSTITUTION: The predetermined bias current is applied to a substrate support unit(210) and a target(220) and the temperature of a reservoir(240) is controlled constantly. Cesium and an auxiliary active material are injected between a substrate(10) and the target(220) in order to coat an outer surface of the target(220) and induce the increase of ionization. The increase of density of flux is proportional to the increase of the flux. The auxiliary active material is formed with one of N2 and inactive materials. A deposition process is performed under the temperature of 80 to 150 degrees centigrade in order to increase effectively the flux and the plasma between the substrate(10) and the target(220).