| 摘要 |
PURPOSE: A method for depositing a multicomponent thin film by atomic layer chemical vapor deposition(ALCVD) method is provided to easily and rapidly deposit a multicomponent thin film of a desired composition while diversely controlling the composition. CONSTITUTION: At least two raw material gases that don't react with each other are simultaneously injected. The quantity of each raw material gas is controlled according to a composition ratio. Si(N(C2H5)2)4 and Zr(N(C2H5)2)4 are used as the raw material gas. The multicomponent thin film is a multicomponent single layer, a multilayer composed of a multicomponent and a single component, or a multicomponent multi layer.
|
