METHOD FOR FORMING OXIDE LAYER AND METHOD FOR FABRICATING CAPACITOR USING THE SAME

摘要

PURPOSE: A method for forming an oxide layer is provided to improve an electrical characteristic and yield of a semiconductor device by forming a pure oxide layer with no impurity, and to reduce a leakage current of a capacitor dielectric layer by using the oxide layer as the capacitor dielectric layer. CONSTITUTION: A wafer(100) is prepared which needs an oxide layer formation process. A cleaning process is performed on the wafer. The wafer is dipped into an oxidation bath(11) containing an oxidation solution(12) in which ozone water and ultra pure water are mixed so that the oxide layer(23a) is formed on the wafer.