发明名称 VERTICAL TYPE LOW PRESSURE VAPOR CHEMICAL DEPOSITION EQUIPMENT
摘要 PURPOSE: Vertical type low pressure chemical vapor deposition equipment is provided to lower a temperature of the edge of a wafer under that of the center of the wafer by cooling a part of an inner tube into which a wafer-mounted wafer boat is loaded and by rotating the wafer boat while the temperature is set lower than that of other portions. CONSTITUTION: A plurality of wafers(145) are stacked on the wafer boat(140). The wafer boat is loaded/unloaded into/from the inner tube(120) whose upper portion is open. An outer tube(130) surrounds the inner tube, separated from the inner tube by a predetermined interval. A heat unit heats the inside of the inner tube, surrounding the outer surface of the outer tube. A unit(160) of decreasing locally wafer temperature is installed in the inner tube so that the edge temperature of the wafers located in the inner tube becomes lower than the center temperature of the wafers. A reaction gas supply apparatus(170) supplies reaction gas reacting with the wafer. An exhausting apparatus(180) exhausts used gas and residual gas.
申请公布号 KR20040013247(A) 申请公布日期 2004.02.14
申请号 KR20020046096 申请日期 2002.08.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HA, JONG HO;KANG, TAE JIN;LIM, JEONG SU
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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