GATE MASK WITH UNEVENNESS DUMMY PATTERN

摘要

PURPOSE: A gate mask with an unevenness dummy pattern is provided to form a stable gate pattern by forming the unevenness dummy pattern in a predetermined portion of a gate to be in contact with an interface of an active region of a semiconductor substrate, and to avoid the leakage current by preventing a parasitic transistor from being formed in the interface of the active region. CONSTITUTION: A mask(100) is prepared in which a gate pattern is to be formed. A gate of a predetermined width is formed in the mask, crossing a selected portion of an active/inactive region of a semiconductor substrate. The center of the dummy pattern corresponds to an interface of the active region(200) at the side surface of the gate. The unevenness dummy patterns(350-1,350-2,350-3) are separated from each other by a predetermined interval.