METHOD FOR FORMING INDUCTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an inductor of a semiconductor device is provided to reduce the parasitic capacitance between a substrate and a metal pattern or between metal patterns by removing an insulating layer around the inductor and maintaining a state of vacuum. CONSTITUTION: The first insulating layer(33) is formed on a silicon substrate(31). The first metal layer(34) is formed on the first insulating layer(33). The second insulating layer(35) is deposited on the first metal layer(34). A contact hole(36) is formed by etching the second insulating layer(35). A metal column(37) is formed within the contact hole(36). The second metal layer is deposited on the second insulating layer(35). A plurality of metal patterns are formed by patterning the second metal layer. A protective layer(39) is formed on the second insulating layer(35). A photoresist pattern is formed on the protective layer(39). A sealing member(40) is adhered on the silicon substrate(31).