发明名称 COMPOUND SEMICONDUCTOR WAFER AND METHOD FOR WORKING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer which does not require polishing of a compound semiconductor wafer rear surface, is enhanced in the strength of the rear surface to make the wafer hardly crackable, and enables the easy identification of the front surface of the compound semiconductor wafer and the rear surface of the compound semiconductor wafer. SOLUTION: The compound semiconductor wafer 1 consists of the compound semiconductor wafer front surface 3 which is a mirror finished surface without working damages and the compound semiconductor wafer rear surface 4 etched after machining, such as lapping, grinding, and cutting. The compound semiconductor wafer rear surface 4 is so etched as to enhance its strength which is higher than one-fifth the strength of the front surface and is preferably about half or more of that. In addition, the compound semiconductor wafer front surface 3 and the compound semiconductor wafer rear surface 4 are identifiable. The compound semiconductor wafer 1 can be provided at a low cost. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004043257(A) 申请公布日期 2004.02.12
申请号 JP20020204922 申请日期 2002.07.12
申请人 DOWA MINING CO LTD 发明人 WATANABE TATSUYA
分类号 C30B33/10;(IPC1-7):C30B33/10 主分类号 C30B33/10
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