| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified resist material capable of suppressing pattern defects of a chemically amplified resist film caused by base species from outside, and to provide a patterning method using the same. <P>SOLUTION: A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. Preferably the activator is a material which is decomposed by heat and generates an acid or a radical, and the material generates the acid or the radical by heating at the temperature lower than the baking temperature for forming a resist film from the coating film of the resist material. The activator may be a material which generates the acid or the radical by the exposure at the wavelength to which the photo acid generator is not sensitive. <P>COPYRIGHT: (C)2004,JPO |
