发明名称 INSPECTION METHOD OF MASK SUBSTRATE, MANUFACTURING METHOD OF EXPOSURE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To realize a mask substrate inspection method effective for solving a problem of production yield lowering due to deterioration in the flatness of the mask substrate which is caused by chucking the mask substrate on the mask stage of a wafer aligner. <P>SOLUTION: A first piece of information is obtained that shows the mask substrate and the surface shape of its main surface (Step S1); a second piece of information is obtained that indicates the flatness of the main surface by simulation of setting the mask substrate in the aligner, from the flatness of the main surface of the mask substrate and the mask chuck structure of the aligner (Step S2); and judgement is made on whether or not the flatness of the main surface of the mask substrate as obtained by the simulation fits specifications (Step S3). <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004046259(A) 申请公布日期 2004.02.12
申请号 JP20030366387 申请日期 2003.10.27
申请人 TOSHIBA CORP 发明人 ITO MASAMITSU
分类号 G03F1/60;G03F1/84;G03F7/20;H01L21/027;(IPC1-7):G03F1/08;G03F1/14 主分类号 G03F1/60
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