| 发明名称 |
SYNTHETIC-FERRIMAGNET SENSE-LAYER FOR HIGH DENSITY MRAM APPLICATIONS |
| 摘要 |
An magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupling and antiferromagnetic exchange coupling across the spacer layer. |
| 申请公布号 |
WO03085674(A3) |
申请公布日期 |
2004.02.12 |
| 申请号 |
WO2003US07843 |
申请日期 |
2003.03.14 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DEAK, JAMES, G. |
| 分类号 |
G11C11/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;H01L43/12 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
