| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a switching memory element which is programable or rewritable electrically, and to provide a memory device. <P>SOLUTION: The organic thin film switching memory element includes a plurality of first electrode lines, an organic memory layer which is formed on the plurality of first electrode lines and has voltage-current hysteresis characteristic, a semiconductor diode layer laminated on the organic memory layer, and a plurality of second electrode lines which are formed on the semiconductor diode layer and in which the respective electrode lines are arranged in a direction intersecting the plurality of first electrode lines. <P>COPYRIGHT: (C)2004,JPO</p> |
