| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus, wherein a conductive film formed on the surface of a wafer by plating can be set uniform in thickness. SOLUTION: A semiconductor device manufacturing method including a process of forming the conductive film on the wafer comprises the conductive film forming process of arranging an anode confronting the wafer, providing one or more auxiliary anodes between the anode and the wafer, and forming the conductive film through electrolytic plating, or the conductive film forming process of arranging an auxiliary cathode around the wafer and forming the conductive film by electrolytic plating, or the conductive film forming process of arranging an auxiliary cathode around the wafer, corresponding to the arrangement position of a feed pin arranged on the wafer, providing an anode confronting the auxiliary cathode and the wafer, and forming the conductive film through electrolytic plating. COPYRIGHT: (C)2004,JPO
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